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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 250 V A W ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 500 500 20 30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C g Features * Low profile, high power package * Long creep and strike distances * Easy up-grade path for TO-220 designs * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications G = Gate, S = Source, D = Drain, TAB = Drain G D S e (TAB) 1.6 mm (0.062 in.) from case for 10 s 300 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.4 V V nA mA mA W * * * * * * * * VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages * High power, low profile package * Space savings * High power density VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98578 (2/99) (c) 2000 IXYS All rights reserved 1-4 IXFJ 13N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7.5 9.0 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25, RG = 4.7 W (External) 27 76 32 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 40 30 40 100 60 120 25 50 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. TO-268 Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) Inches Min Max .193 .106 .045 .075 .016 .057 .201 .114 .057 .083 .026 .063 Millimeters Min Max 4.90 2.70 1.15 1.90 .040 1.45 5.10 2.90 1.45 2.10 .065 1.60 A A1 b b2 C C2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 13 52 1.5 250 350 0.6 1.25 9 15 A A V ns ns mC mC A A D D1 E E1 e H L L1 L2 .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 .800 .091 .045 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15 1.395 34.67 35.43 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFJ 13N50 25 TJ = 25C VGS=10V 8V 7V 6V 25 20 TJ = 25C 20 ID - Amperes ID - Amperes 20 15 10 5V 15 10 5 0 5 0 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Figure 1. Output Characteristics at 25OC 1.4 TJ = 25C Figure 2. Output Characteristics at 125OC 2.50 2.25 1.3 RDS(on) - Normalized RDS(on) - Normalized VGS = 10V 2.00 ID = 6A 1.2 1.1 VGS = 15V 1.75 1.50 1.25 1.00 0.75 1.0 0.9 0.8 0 5 10 15 20 25 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value 15.0 13N50 Figure 4. RDS(on) normalized to 0.5 ID25 value 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized -25 0 25 50 75 100 125 150 12.5 ID - Amperes 10.0 7.5 5.0 2.5 0.0 -50 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXFJ 13N50 10 9 8 7 VDS = 250V ID = 6.5A IG = 10mA 100 10s ID - Amperes VGS - Volts 10 Limited by RDS(on) 100s 1ms 6 5 4 3 2 1 0 0 25 50 75 100 1 10ms 100ms 0.1 1 10 100 Gate Charge - nCoulombs VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 4000 3500 25 20 Capacitance - pF 3000 2500 2000 1500 1000 500 0 0 5 10 IS - Amperes Ciss 15 TJ = 125C 10 TJ = 25C Coss Crss 5 0 0.00 15 20 25 0.25 0.50 0.75 1.00 1.25 1.50 VDS - Volts VSD - Volt Figure 9. Source Current vs. Source to Drain Voltage 1.00 Figure10. Forward Bias Safe Operating Area Thermal Response - K/W D = 0.5 D = 0.2 0.10 D = 0.1 D = 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
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